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319942 Datasheet(PDF) 61 Page - Numonyx B.V

Part # 319942
Description  Numonyx® Embedded Flash Memory (J3 65nm) Single Bit per Cell (SBC)
PDF  67 Pages
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

319942 Datasheet(HTML) 61 Page - Numonyx B.V

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Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
Datasheet
60
13.5
System Interface Information
The following device information can optimize system interface software.
13.6
Device Geometry Definition
This field provides critical details of the flash device geometry.
Table 40: System Interface Information
Offset
Length
Description
Add.
Hex
Code
Value
1Bh
1
VCC logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
1B:
--27
2.7 V
1Ch
1
VCC logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
1C:
--36
3.6 V
1Dh
1
VPP [programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1D:
--00
0.0 V
1Eh
1
VPP [programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1E:
--00
0.0 V
1Fh
1
“n” such that typical single word program time-out = 2n µs
1F:
--06
64 µs
20h
1
“n” such that typical max. buffer write time-out = 2n µs
20:
--07 1
128 µs 1
21h
1
“n” such that typical block erase time-out = 2n ms
21:
--0A
1 s
22h
1
“n” such that typical full chip erase time-out = 2n ms
22:
--00
NA
23h
1
“n” such that maximum word program time-out = 2n times typical
23:
--02
256 µs
24h
1
“n” such that maximum buffer write time-out = 2n times typical
24:
--03
1024µs
25h
1
“n” such that maximum block erase time-out = 2n times typical
25:
--02
4 s
26h
1
“n” such that maximum chip erase time-out = 2n times typical
26:
--00
NA
Notes:
1.
The value is 32 Bytes buffer write typical time out
Table 41: Device Geometry Definition (Sheet 1 of 2)
Offset
Length
Description
Code See Table Below
27h
1
“n” such that device size = 2n in number of bytes
27:
28h
2
Flash device interface: x8 async x16 async x8/x16 async
28:
--02
x8/
x16
28:00,29:00 28:01,29:00 28:02,29:00
29:
--00
2Ah
2
“n” such that maximum number of bytes in write buffer = 2n
2A:
--05 1
32 1
2B:
--00
2Ch
1
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions with one or more
contiguous same-size erase blocks
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
2C:
--01
1
Notes:
1.
The value is 32 Bytes buffer write typical time out



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