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BGY925 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BGY925 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page ![]() 2000 Feb 02 5 Philips Semiconductors Product specification UHF amplifier module BGY925 handbook, halfpage 800 900 f (MHz) Gp (dB) 1000 1100 35 25 20 30 MCD834 Fig.6 Small signal in band power gain as a function of frequency; typical values. ZS =ZL =50 Ω; PD = −30 dBm; VS1 =VS2 =26V; Tmb =25 °C. handbook, halfpage 800 900 f (MHz) Return Losses (dB) 1000 1100 0 −20 −4 −8 −12 −16 MCD835 Fig.7 Small signal in band input return losses as a function of frequency; typical values. ZS =ZL =50 Ω; PD = −30 dBm; VS1 =VS2 =26V; Tmb =25 °C. handbook, halfpage 0 f (MHz) Gp (dB) 500 1500 40 20 −80 −60 −40 −20 0 1000 MCD836 Fig.8 Small signal out band power gain as a function of frequency; typical values. ZS =ZL =50 Ω; VS1 =VS2 =26V; PD = −30 dBm; Tmb =25 °C. handbook, halfpage 010 (1) (4) (5) PL (W) Gp (dB) 20 40 34 24 32 30 30 28 26 MCD837 (7) (6) (3) (2) Fig.9 Power gain as a function of load power; typical values ZS =ZL =50 Ω; VS1 =VS2 = 26 V; Tmb =25 °C. (1) Tamb = −33°C. (2) Tamb = −20°C. (3) Tamb =3°C. (4) Tamb =25°C. (5) Tamb =50°C. (6) Tamb =75°C. (7) Tamb = 100°C. |
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