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BGY925 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BGY925 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() 2000 Feb 02 2 Philips Semiconductors Product specification UHF amplifier module BGY925 FEATURES • 26 V nominal supply voltage • 23 W output power into a load of 50 Ω with an RF drive power of 36 mW. APPLICATIONS • Base station transmitting equipment operating in the 920 to 960 MHz frequency range. DESCRIPTION The BGY925 is a three-stage UHF amplifier module in a SOT365A package. It consists of one NPN silicon planar transistor die and two silicon MOSFET dies mounted on a metallized ceramic AlN substrate, together with matching and bias circuitry. PINNING - SOT365A PIN DESCRIPTION 1 RF input 2VS1 3VS2 4 RF output Flange ground handbook, halfpage MSA447 2 13 4 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb =25 °C. Note 1. At PL =16W. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). MODE OF OPERATION f (MHz) VS1, VS2 (V) PL (W) Gp (dB) η (%) (note 1) ZS, ZL ( Ω) CW 920 to 960 26 23 ≥28 ≥30 50 SYMBOL PARAMETER MIN. MAX. UNIT VS1 DC supply voltage − 28 V VS2 DC supply voltage − 28 V PD input drive power − 80 mW PL load power − 32 W Tstg storage temperature −30 +100 °C Tmb operating mounting-base temperature −10 +90 °C |
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