BLF175 datasheet(6/18 Pages) PHILIPS

6 / 18 page

September 1992

Philips Semiconductors

Product speciﬁcation

HF/VHF power MOS transistor

BLF175

APPLICATION INFORMATION FOR CLASS-A OPERATION

Th = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise speciﬁed.

RF performance in SSB operation in a common source circuit.

f1 = 28.000 MHz; f2 = 28.001 MHz.

Note

1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are

referred to the according level of either the equal amplified tones. Related to the according peak envelope power

these figures should be decreased by 6 dB.

(W)

(MHz)

VDS

(V)

IDQ

(mA)

(dB)

(note 1)

(dB)

(note 1)

RGS

(

Ω)

0 to 8 (PEP)

800

> 24

typ. 28

>−40

typ.

−44

<−40

typ.

−64

Fig.9

Power gain as a function of load power,

typical values.

Class-A operation; VDS = 50 V; IDQ = 0.8 A;

RGS = 24 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

solid line: Th = 25 °C.

dotted line: Th = 70 °C.

handbook, halfpage

MGP069

(dB)

PL (W) PEP

Fig.10 Third order intermodulation distortion as a

function of load power, typical values.

Class-A operation; VDS = 50 V; IDQ = 0.8 A;

RGS = 24 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

solid line: Th = 25 °C.

dotted line: Th = 70 °C.

handbook, halfpage

−20

−60

−80

−40

MGP070

(dB)

PL (W) PEP

BLF175 Datasheet(PDF) 6 Page - NXP Semiconductors

BLF175 Datasheet(HTML) 6 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

Datasheet Download

Link URL