BLF175 datasheet(11/18 Pages) PHILIPS

Part #	BLF175

Description	HF/VHF power MOS transistor

PDF	18 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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11 / 18 page

September 1992

Philips Semiconductors

Product speciﬁcation

HF/VHF power MOS transistor

BLF175

Fig.17 Third order intermodulation distortion as a

function of load power, typical values.

Class-AB operation; VDS = 50 V; IDQ = 0.15 A;

RGS = 22 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

handbook, halfpage

204060

−20

−60

−40

MGP078

(dB)

PL (W) PEP

Fig.18 Fifth order intermodulation distortion as a

function of load power, typical values.

Class-AB operation; VDS = 50 V; IDQ = 0.15 A;

RGS = 22 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

handbook, halfpage

204060

−20

−60

−40

MGP079

(dB)

PL (W) PEP

Fig.19 Test circuit for class-AB operation.

f = 28 MHz.

handbook, full pagewidth

C12

+VD

Ω

output

C11

C10

D.U.T.

+VG

Ω

output

MGP080

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