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BLF175 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BLF175 Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 18 page ![]() September 1992 7 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 Fig.11 Power gain as a function of frequency, typical values. Class-A operation; VDS = 50 V; IDQ = 0.8 A; PL = 8 W (PEP); RGS = 24 Ω; f1 − f2 = 1 MHz. handbook, halfpage 010 20 40 40 30 10 0 20 MGP071 30 Gp (dB) f (MHz) Fig.12 Third order intermodulation distortion as a function of frequency, typical values. Class-A operation; VDS = 50 V; IDQ = 0.8 A; PL = 8 W (PEP); RGS = 24 Ω; f1 − f2 = 1 MHz. handbook, halfpage 010 20 40 −20 −60 −40 MGP072 30 d3 (dB) f (MHz) Fig.13 Test circuit for class-A operation. f = 28 MHz. handbook, full pagewidth MGP073 50 Ω input C1 C2 T1 C3 D.U.T. L4 L1 L2 R1 +VG +VD C9 L3 R3 R2 C4 C7 C8 C6 C5 50 Ω output |
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