BLF175 datasheet(10/18 Pages) PHILIPS

10 / 18 page

September 1992

Philips Semiconductors

Product speciﬁcation

HF/VHF power MOS transistor

BLF175

APPLICATION INFORMATION FOR CLASS-AB OPERATION

Th = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise speciﬁed.

RF performance in SSB operation in a common source circuit.

f1 = 28.000 MHz; f2 = 28.001 MHz.

(W)

(MHz)

VDS

(V)

IDQ

(mA)

(dB)

ηD

(%)

(dB)

(note 1)

(dB)

(note 1)

RGS

(

Ω)

30 (PEP)

150

typ. 24

typ. 40

(note 2)

typ.

−35

typ.

−40

Notes

1. Stated figures are maximum values encountered at

any driving level between the specified value of PEP

and are referred to the according level of either the

equal amplified tones. Related to the according peak

envelope power these figures should be decreased by

6 dB.

2. 2-tone efficiency.

Ruggedness in class-AB operation

The BLF175 is capable of withstanding a load mismatch

corresponding to VSWR = 50 through all phases at

PL = 30 W single tone under the following conditions:

VDS = 50 V; f = 28 MHz.

Fig.15 Power gain as a function of load power,

typical values.

Class-AB operation; VDS = 50 V; IDQ = 0.15 A;

RGS = 22 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

handbook, halfpage

204060

MGP076

(dB)

PL (W) PEP

Fig.16 Two tone efficiency as a function of load

power, typical values.

Class-AB operation; VDS = 50 V; IDQ = 0.15 A;

RGS = 22 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

handbook, halfpage

204060

MGP077

(%)

PL (W) PEP

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