May 1991

3

Philips Semiconductors

Product specification

UHF power transistor

BLT53

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

20

V

collector-emitter voltage

open base

−

10

V

emitter-base voltage

open collector

−

3V

collector current

DC or average value

−

2.5

A

collector current

peak value

f

> 1 MHz

−

7.5

A

total power dissipation

RF operation;

−

35.5

W

storage temperature range

−65

150

°C

junction operating temperature

−

200

°C

Fig.2 DC SOAR.

handbook, halfpage

MCD192

10

VCE (V)

IC

(A)

1

10

1

Tmb = 25

Fig.3 Power derating curve.

(1) Continuous DC operation.

(2) Continuous RF operation (f

> 1 MHz).

(3) Short time operation during mismatch (f

> 1 MHz).

handbook, halfpage

040

80

Ptot

(W)

Tmb (

160

50

0

MCD193

120

40

30

20

10

(1)

(3)

(2)

THERMAL RESISTANCE

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

from junction to mounting base

4.9

K/W