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BLT80 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BLT80 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() 1996 May 09 2 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. PINNING - SOT223 PIN SYMBOL DESCRIPTION 1 e emitter 2 b base 3 e emitter 4 c collector Fig.1 Simplified outline and symbol. handbook, halfpage e c b MAM043 - 1 4 123 Top view QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Fig.7). MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) CW, class-B narrow band 900 7.5 0.8 ≥6 ≥60 |
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