1997 Oct 27

3

Philips Semiconductors

Product specification

UHF push-pull power transistor

BLV950

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. Total device; both sections equally loaded; thermal resistance is determined under specified RF operating

conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor section

collector-base voltage

open emitter

−

70

V

collector-emitter voltage

open base

−

30

V

emitter-base voltage

open collector

−

3V

collector current (DC)

−

12

A

average collector current

−

12

A

total power dissipation (DC)

−

340

W

storage temperature

−65

+150

°C

operating junction temperature

−

200

°C

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

thermal resistance from junction to

mounting base

0.52

K/W

thermal resistance from mounting

base to heatsink

0.15

K/W