1996 Feb 06

3

Philips Semiconductors

Product specification

UHF power transistor

BLX94C

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-emitter voltage (peak value)

−

65

V

collector-emitter voltage

open base

−

30

V

emitter-base voltage

open collector

−

4V

collector current (DC)

−

2.5

A

average collector current

−

2.5

A

peak collector current

f > 1 MHz

−

6A

total power dissipation

−

60

W

storage temperature

−65

+150

°C

operating junction temperature

−

200

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to

mounting base (DC dissipation)

4

K/W

thermal resistance from junction to

mounting base (RF dissipation)

2.7

K/W

thermal resistance from mounting base

to heatsink

0.6

K/W

Fig.2 DC SOAR.

handbook, halfpage

MBH096

10

110

1

IC

(A)

VCE (V)

(1)

(2)

Fig.3 Power derating curves.

(1) Continuous DC operation.

(2) Continuous RF operation.

(3) Short-time operation during mismatch.

handbook, halfpage

0

100

60

10

20

MBH097

30

40

50

50

Th (

Ptot

(W)

(1)

(2)

(3)