BLX94C datasheet(4/11 Pages) PHILIPS

4 / 11 page

1996 Feb 06

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLX94C

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. Measured under pulsed conditions: tp ≤ 200 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)CES

collector-emitter breakdown voltage VBE = 0; IC =25mA

−−

V(BR)CEO

collector-emitter breakdown voltage open base; IC = 100 mA

−−

V(BR)EBO

emitter-base breakdown voltage

open collector; IE =10mA

−−

VCEsat

collector-emitter saturation voltage

IC = 4 A; IB = 0.8 A; note 1

−

1.5

−

ICES

collector cut-off current

VBE = 0; VCE =30V

−−

ESBR

second breakdown energy

open base; L = 25 mH; f = 50 Hz

−−

RBE =10 Ω; L = 25 mH; f = 50 Hz

−−

hFE

DC current gain

VCE =5V; IC = 1.5 A; note 1

−

transition frequency

VCB = 28 V; IE = −1.5 A;

f = 500 MHz; note 1

−

1.1

−

VCB = 28 V; IE = −4A;

f = 500 MHz; note 1

−

0.75

−

collector capacitance

VCB = 28 V; IE =ie = 0; f = 1 MHz

−

Cre

feedback capacitance

VCE = 28 V; IC = 20 mA; f = 1 MHz;

−

Cc-s

collector-stud capacitance

−

1.2

−

Fig.4

DC current gain as a function of collector

current; typical values.

Measured under pulsed conditions; tp ≤ 200 µs; δ≤ 0.02;Tj =25 °C.

(1) VCE =25V.

(2) VCE =5V.

handbook, halfpage

100

MBH099

2IC (A)

hFE

VCE = 25 V

5 V

Fig.5

Collector capacitance as a function of

collector-base voltage; typical values.

IE =ie = 0; f = 1 MHz; Tj =25 °C.

handbook, halfpage

040

MBH098

VCB (V)

(pF)

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