1.

Electrical Specifications

1.1

Typical Electrical Performance

Table 1-1. Electrical Specifications

Parameter

Min

Typical Max

Units

Conditions(1)

Frequency Range

27.5

31

GHz

Saturated Output Power, Psat

37

39.5

dBm

Pin = 24 dBm

Power Added Efficiency, PAE

22

%

Pin = 24 dBm

Small Signal Gain, S21

22

dB

Input Return Loss

–15

dB

Output Return Loss

–15

dB

Power Detector Range

20

39

dBm

Temperature reference diode provided

(1) Test conditions unless otherwise stated CW, VD = 24V, IDQ = 110 mA ,VG~ –1.84V typical, TA = 25 ºC

Table 1-2. Recommended Operating Conditions

Parameters

Value

Drain Voltage (VD)

20V – 24V

Drain Quiescent Current (IDQ)

100 mA – 224 mA

Gate Voltage Range (VG)

–2V to –1.5V

Operating Temperature (TA)

–40 °C to +85 °C

1.2

Absolute Maximum Ratings

Table 1-3. Thermal and Reliability

Parameters

Value

Thermal resistance

4.9 ºC/W

Notes

1.

Assumes silver sintered epoxy attach (20 µm thick) mounted on CuMo carrier.

2.

Base temperature is assumed at the top of the CuMo carrier

3.

Thermal resistance calculated using IR measurement of the channel temperature

Table 1-4. Absolute Maximum Ratings

Parameters

Absolute Maximum

Drain voltage (VDG)

32V

Gate voltage range (VG

–5V to 0V

Drain current (ID)

3A

ICP2840

Electrical Specifications

© 2022 Microchip Technology Inc.

and its subsidiaries

Data Sheet

DS-00004072B-page 3