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ICP2840 Datasheet(PDF) 12 Page - Microchip Technology |
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ICP2840 Datasheet(HTML) 12 Page - Microchip Technology |
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12 / 21 page ![]() 2. Die Specifications • Units: µm • Thickness: 100 µm • Die size tolerance: ±50 μm • Backside is RF and DC ground • Amplifier must be biased from both sides (N) North, (S) South Figure 2-1. Die Outline Drawing Table 2-1. I/O Description Pad No Pad Size (µm) Function Description 1 85×170 RFIN DC blocked and 50Ω matched 2 85×85 GND Ground Pad 3 85×85 VG1N Gate voltage, decoupling and bypass caps required 4 85×85 VG2N Gate voltage, decoupling and bypass caps required 5 85×85 VG3N Gate voltage, decoupling and bypass caps required 6 85×85 GND Ground Pad 7 85×85 VD1N & VD2N Drain voltage, decoupling and bypass caps required 8 170×170 VD3N Drain voltage, decoupling and bypass caps required 9 85×85 GND Ground Pad 10 85×170 RFOUT DC blocked and 50Ω matched 11 85×85 VREF Detector reference voltage ICP2840 Die Specifications © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS-00004072B-page 12 |
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