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BZV85 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BZV85 Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 8 page ![]() 1999 May 11 6 Philips Semiconductors Product specification Voltage regulator diodes BZV85 series Fig.3 Non-repetitive peak reverse current as a function of the nominal working voltage. handbook, halfpage MBG802 102 10 VZnom (V) IZSM (A) 10 1102 10−1 1 (1) (2) (1) tp =10 µs; half sinewave; Tamb =25 °C. (2) tp = 10 ms; half sinewave; Tamb =25 °C. Fig.4 Forward current as a function of forward voltage; typical values. handbook, halfpage 0 1.0 300 0 100 200 MBG925 0.5 VF (V) IF (mA) (1) (2) (1) Tj = 200 °C. (2) Tj =25 °C. Fig.5 Temperature coefficient as a function of working current; typical values. BZV85-C3V6 to C10. Tj =25to150 °C. For types above 7.5 V the temperature coefficient is independent of current; see Table “Per type”. handbook, halfpage 050 10 0 −5 5 MBG926 25 IZ (mA) SZ (mV/K) 4V7 4V3 3V6 3V9 10 9V1 8V2 7V5 6V8 6V2 5V6 5V1 Fig.6 Temperature coefficient as a function of nominal working voltage. handbook, halfpage 100 0 102 MBG800 10 VZnom (V) SZ (mV/K) 1 20 40 60 80 (2) (1) (3) IZ= IZtest; Tj =25to150 °C. (1) Maximum values. (2) Typical values. (3) Minimum values. |
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