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BZV85 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BZV85
Description  Voltage regulator diodes
PDF  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BZV85 Datasheet(HTML) 2 Page - NXP Semiconductors

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1999 May 11
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV85 series
FEATURES
• Total power dissipation:
max. 1.3 W
• Tolerance series: approx. ±5%
• Working voltage range:
nom. 3.6 to 75 V (E24 range)
• Non-repetitive peak reverse power
dissipation: max. 60 W.
APPLICATIONS
• Stabilization purposes.
DESCRIPTION
Medium-power voltage regulator diodes in hermetically sealed leaded glass
SOD66 (DO-41) packages. The diodes are available in the normalized E24
approx.
±5% tolerance range. The series consists of 33 types with nominal
working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75).
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
The diodes are type branded.
handbook, halfpage
MAM241
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead.
2. If the leads are kept at Ttp =55 °C at 4 mm from body.
ELECTRICAL CHARACTERISTICS
Total series
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IF
continuous forward current
−
500
mA
IZSM
non-repetitive peak reverse current
tp = 100 µs; square wave;
Tj =25 °C prior to surge; see Fig.3
see Table
“Per type”
tp = 10 ms; half sinewave;
Tj =25 °C prior to surge
see Table
“Per type”
Ptot
total power dissipation
Tamb =25 °C; lead length 10 mm;
note 1
−
1W
note 2
−
1.3
W
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 µs; square wave;
Tj =25 °C prior to surge
−
60
W
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
−
200
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 50 mA; see Fig.4
1
V



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