7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

VS

Supply voltage, VS = (V+) – (V–)

6

V

VI

Input voltage

(V–) – 0.5

(V+) + 0.5

V

VID

Differential input voltage

±5

V

II

Continuous input current(2)

±10

mA

ISC

Output short-circuit(3)

Continuous

TA

Operating temperature

–40

125

°C

TJ

Junction temperature

150

°C

Tstg

Storage temperature

–65

150

°C

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully

functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

(2)

Input pins are diode-clamped to the power-supply rails. Limit the current of input signals that can swing more than 0.5 V beyond the

supply rails to 10 mA or less.

(3)

Short-circuit to ground, one amplifier per package.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002(2)

±1000

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VS

Supply voltage, VS = (V+) – (V–)

2.2

5.5

V

TA

Specified temperature

–40

25

125

°C

7.4 Thermal Information

THERMAL METRIC(1)

TLV365

TLV2365

UNIT

DBV (SOT-23)

D (SOIC)

5 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance

179

140

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

78

89

°C/W

RθJB

Junction-to-board thermal resistance

46

80

°C/W

ψJT

Junction-to-top characterization parameter

19

28

°C/W

ψJB

Junction-to-board characterization parameter

46

80

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

TLV365, TLV2365

SBOSAA8B – DECEMBER 2022 – REVISED SEPTEMBER 2023

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