IRFS4410Z datasheet(2/9 Pages) UMW

2 / 9 page

Notes:

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.143mH

RG = 25

Ω, IAS = 58A, VGS =10V. Part not recommended for use

above this value.

ISD ≤ 58A, di/dt ≤ 610A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

Rθ is measured at TJ approximately 90°C.

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient

0.12

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

7.2

9.0

VGS(th)

Gate Threshold Voltage

2.0

4.0

IDSS

Drain-to-Source Leakage Current

μA

250

IGSS

Gate-to-Source Forward Leakage

100

Gate-to-Source Reverse Leakage

-100

Internal Gate Resistance

0.70

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

140

Total Gate Charge

120

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

Qsync

Total Gate Charge Sync. (Qg - Qgd)

td(on)

Turn-On Delay Time

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

Ciss

Input Capacitance

4820

Coss

Output Capacitance

340

Crss

Reverse Transfer Capacitance

170

Coss eff. (ER) Effective Output Capacitance (Energy Related) hÃ

420

Coss eff. (TR) Effective Output Capacitance (Time Related)g

690

Symbol

Parameter

Min. Typ. Max. Units

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

390

(Body Diode)

VSD

Diode Forward Voltage

1.3

trr

Reverse Recovery Time

ns TJ = 25°C

VR = 85V,

TJ = 125°C

IF = 58A

Qrr

Reverse Recovery Charge

nC TJ = 25°C

di/dt = 100A/μs

120

TJ = 125°C

IRRM

Reverse Recovery Current

2.5

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

ID = 58A

RG =2.7Ω

VGS = 10V f

VDD = 65V

ID = 58A, VDS =0V, VGS = 10V f

TJ = 25°C, IS = 58A, VGS = 0V f

integral reverse

p-n junction diode.

Conditions

VGS = 0V, ID = 250μA

Reference to 25°C, ID = 5mA

VGS = 10V, ID = 58A f

VDS = VGS, ID = 150μA

VDS = 100V, VGS = 0V

VDS = 80V, VGS = 0V, TJ = 125°C

MOSFET symbol

showing the

VDS =50V

Conditions

VGS = 10V f

VGS = 0V

VDS = 50V

ƒ = 1.0MHz, See Fig.5

VGS = 0V, VDS = 0V to 80V h, See Fig.11

VGS = 0V, VDS = 0V to 80V gÃ

Conditions

VDS = 10V, ID = 58A

ID = 58A

VGS = 20V

VGS = -20V

UMW

IRFS4410Z

100 V N-Channel MOSFET

www.umw-ic.com

UTD Semiconductor Co.,Limited

IRFS4410Z Datasheet(PDF) 2 Page - Guangdong Youtai Semiconductor Co., Ltd.

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