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IRFS4410Z Datasheet(PDF) 1 Page - Guangdong Youtai Semiconductor Co., Ltd. |
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IRFS4410Z Datasheet(HTML) 1 Page - Guangdong Youtai Semiconductor Co., Ltd. |
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1 / 9 page  S D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery e V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw EAS (Thermally limited) Single Pulse Avalanche Energy d mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy f mJ Symbol Parameter Typ. Max. Units RθJC Junction-to-Case j 0.65 RθCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 °C/W RθJA Junction-to-Ambient, TO-220 j 62 RθJA Junction-to-Ambient (PCB Mount) , D2Pak ij 40 300 Max. 97 69 390 242 See Fig. 14, 15, 22a, 22b, 230 16 -55 to + 175 ± 20 1.5 10lbx in (1.1Nx m) UMW R IRFS4410Z 100 V N-Channel MOSFET l VDS l ID (at VGS=10V)=97A l RDS(ON)(at VGS=10V) < 9mΩ 100V = www.umw-ic.com 1 UTD Semiconductor Co.,Limited TO-263 G D S |
Similar Part No. - IRFS4410Z |
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Similar Description - IRFS4410Z |
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