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IRFS4410Z Datasheet(PDF) 5 Page - Guangdong Youtai Semiconductor Co., Ltd.

Part # IRFS4410Z
Description  100 V N-Channel MOSFET
PDF  9 Pages
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Manufacturer  UMW [Guangdong Youtai Semiconductor Co., Ltd.]
Direct Link  https://www.umw-ic.com/
Logo UMW - Guangdong Youtai Semiconductor Co., Ltd.

IRFS4410Z Datasheet(HTML) 5 Page - Guangdong Youtai Semiconductor Co., Ltd.

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Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Typical Avalanche Current vs.Pulsewidth
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7.
ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2
DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τJ
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
τ
C
Ci
i
/Ri
Ci=
τi/Ri
Ri (°C/W)
τi (sec)
0.237
0.000178
0.413
0.003772
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
50
100
150
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 58A
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
0.1
1
10
100
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Δ Tj = 150°C and
Tstart =25°C (Single Pulse)
UMW
R
IRFS4410Z
100 V N-Channel MOSFET
www.umw-ic.com
5
UTD Semiconductor Co.,Limited



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