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AS4SD16M16 Datasheet(PDF) 37 Page - Austin Semiconductor |
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AS4SD16M16 Datasheet(HTML) 37 Page - Austin Semiconductor |
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37 / 51 page ![]() SDRAM SDRAM SDRAM SDRAM SDRAM AS4SD16M16 Austin Semiconductor, Inc. AS4SD16M16 Rev. 1.0 11/02 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 37 READ - WITH AUTO PRECHARGE1 *CAS latency indicated in parentheses. NOTES: 1. For this example, the burst length = 4, the CAS latency = 2, and the READ burst is followed by a “manual” PRECHARGE. 2. A9, A11, and A12 = “Don’t Care” TIMING PARAMETERS MIN MAX MIN MAX tAC(3) 5.4 ns tCMH 0.8 ns tAC(2) 6 ns tCMS 1.5 ns tAH 0.8 ns tHZ(3) 5.4 ns tAS 1.5 ns tHZ(2) 6ns tCH 2.5 ns tLZ 1ns tCL 2.5 ns tOH 3ns tCK(3) 7.5 ns tRAS 44 80,000 ns tCK(2) 10 ns tRC 66 ns tCKH 0.8 ns tRCD 20 ns tCKS 1.5 ns tRP 20 ns -75 UNITS -75 SYMBOL* UNITS SYMBOL* |
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