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AS4SD16M16 Datasheet(PDF) 41 Page - Austin Semiconductor |
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AS4SD16M16 Datasheet(HTML) 41 Page - Austin Semiconductor |
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41 / 51 page  SDRAM SDRAM SDRAM SDRAM SDRAM AS4SD16M16 Austin Semiconductor, Inc. AS4SD16M16 Rev. 1.0 11/02 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 41 READ - FULL-PAGE BURST1 *CAS latency indicated in parentheses. NOTES: 1. For this example, the CAS latency = 2. 2. A9, A11, and A12 = “Don’t Care” 3. Page left open; no t RP . TIMING PARAMETERS MIN MAX MIN MAX tAC(3) 5.4 ns tCKS 1.5 ns tAC(2) 6 ns tCMH 0.8 ns tAH 0.8 ns tCMS 1.5 ns tAS 1.5 ns tHZ(3) 5.4 ns tCH 2.5 ns tHZ(2) 6ns tCL 2.5 ns tLZ 1ns tCK(3) 7.5 ns tOH 3ns tCK(2) 10 ns tRCD 20 ns tCKH 0.8 ns -75 UNITS -75 SYMBOL* UNITS SYMBOL* |
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