Data Sheet

ADPA1116

0.3 GHz to 6 GHz, 39.5 dBm, GaN Power Amplifier

Rev. 0

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FEATURES

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Internally matched, 0.3 GHz to 6 GHz, 39.5 dBm, GaN power

amplifier

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RF input and RF output AC-coupled

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Integrated drain bias inductors

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Output power: 39.5 dBm typical from 0.5 GHz to 5 GHz

(PIN = 16.0 dBm)

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Power gain: 23.5 dB typical from 0.5 GHz to 5 GHz

(PIN = 16.0 dBm)

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PAE: 40% typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm)

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Small signal gain: 33.5 dB typical from 0.5 GHz to 5 GHz

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Supply voltage: 28 V

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Quiescent current: 300 mA

APPLICATIONS

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Electronic warfare

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Communications

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Radar

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram

GENERAL DESCRIPTION

The ADPA1116 is a 0.3 GHz to 6 GHz power amplifier with a

saturated output power (POUT) of 39.5 dBm, power added efficiency

(PAE) of 40%, and a power gain of 23.5 dB typical from 0.5 GHz

to 5 GHz at an input power (PIN) of 16.0 dBm. The RF input and

RF output are internally matched and AC-coupled. A drain bias

voltage of 28 V is applied to the VDD1 and VDD2 pins, which have

integrated bias inductors. The drain current is set by applying a

negative voltage to the VGG1 pin.

The ADPA1116 is fabricated on a gallium nitride (GaN) process,

is housed in a 32-lead lead frame chip scale package, premolded

cavity [LFCSP_CAV], and is specified for operation from −40°C to

+85°C