PMBTH81 datasheet(2/7 Pages) PHILIPS

2 / 7 page

September 1995

Philips Semiconductors

Product speciﬁcation

PNP 1 GHz switching transistor

PMBTH81

FEATURES

• Low cost

• High transition frequency.

DESCRIPTION

The PMBTH81 is a general purpose

silicon pnp transistor, encapsulated in

a SOT23 plastic envelope. Its

complement is the PMBTH10.

PINNING

DESCRIPTION

Code: V31

base

emitter

collector

Fig.1 SOT23.

fpage

MSB003

Top view

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector tab.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

Ptot

total power dissipation

Ts =45 °C (note 1)

−

400

Cce

collector-emitter capacitance

VCB = 10 V; IB = 0; f = 1 MHz

−

0.65

Ccb

collector-base capacitance

VCB = 10 V; IE = 0; f = 1 MHz

−

0.85

transition frequency

VCE = 10 V; IC = 5 mA;

f = 100 MHz; Tamb =25 °C

600

−

MHz

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