PMBTH81 datasheet(3/7 Pages) PHILIPS

3 / 7 page

September 1995

Philips Semiconductors

Product speciﬁcation

PNP 1 GHz switching transistor

PMBTH81

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL RESISTANCE

Note

1. Ts is the temperature at the soldering point of the collector tab.

CHARACTERISTICS

Tj = 25 °C

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

collector current

−

Ptot

total power dissipation

Ts =45 °C (note 1)

−

400

Tstg

storage temperature

−65

150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

THERMAL RESISTANCE

Rth j-s

from junction to soldering point (note 1)

260 K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

open emitter; IC =10 µA; IE =0

−

V(BR)CEO

collector-emitter breakdown

voltage

open base; IC = 1 mA; IB =0

−

V(BR)EBO

emitter-base breakdown voltage

open collector; IE =10 µA; IC =0

−

VCE sat

collector-emitter saturation voltage

IC = 5 mA; IB = 0.5 mA

−

0.5

VBE on

base-emitter ON voltage

VCE = 10 V; IC = 5 mA

−

0.9

ICBO

collector-base cut-off current

VCB = 10 V; IE =0

−

100

IEBO

emitter-base cut-off current

VEB = 2 V; IC =0

−

100

hFE

DC current gain

VCE = 10 V; IC = 5 mA

−

Cce

collector-emitter capacitance

VCB = 10 V; IB = 0; f = 1 MHz

−

0.65

Ccb

collector-base capacitance

VCB = 10 V; IE = 0; f = 1 MHz

−

0.85

transition frequency

VCE = 10 V; IC = 5 mA;

f = 100 MHz; Tamb =25 °C

600

−

MHz

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