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SA3601 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # SA3601
Description  Low voltage dual-band RF front-end
PDF  14 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

SA3601 Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Preliminary specification
SA3601
Low voltage dual-band RF front-end
2
1999 Nov 09
DESCRIPTION
The SA3601 is an integrated dual-band RF front-end that operates at
both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and
is designed in a 20 GHz fT BiCMOS process—QUBiC2. The
low-band (LB) receiver is a combined low-noise amplifier (LNA) and
mixer. The LNA has a 1.7 dB noise figure (NF) at 881 MHz with 17 dB
of gain and an IIP3 of –7 dBm. The wide-dynamic range mixer has a
9.5 dB NF at 881 MHz with 9.5 dB of gain and an IIP3 of +6 dBm.
The high-band (HB) receiver is a combined low-noise amplifier (LNA)
and mixer, with the low-band and high-band mixers sharing the same
mixer output. The LNA has a 2.2 dB NF at 1960 MHz with 16 dB of
gain and an IIP3 of –5 dBm. The wide-dynamic range mixer has a
8.5 dB NF at 1960 MHz with 8.5 dB of gain and an IIP3 of +5.5 dBm.
FEATURES
• Low current consumption: LB I
CC = 14 mA; HB ICC = 15.5 mA
• Outstanding low- and high-band noise figure
• LNAs with gain control (30 dB gain step)
• LO input and output buffers
• Frequency doubler
• On chip logic for network selection and power down
• Very small outline package
APPLICATIONS
• 800 to 1000 MHz analog and digital receivers
• 1800 to 2000 MHz digital receivers
• Portable radios
• Mobile communications equipment
PIN CONFIGURATION
2
3
4
5
6
7
8
TOP VIEW
1
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
HBLNA_IN
GND
HBMXR+_IN
HBMXR–_IN
PD1
GND
GND
LBMXR_IN
GND
MXR+_OUT
MXR–_OUT
GND
LBVCO_IN
VCC
VCC
VCC
SR02237
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
SA3601
BCC32++
HBCC32:
plastic, heatsink bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm
SOT560-1



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