SA636 datasheet(6/17 Pages) PHILIPS

6 / 17 page

Philips Semiconductors

Product specification

SA636

Low voltage high performance mixer FM IF system

with high-speed RSSI

1997 Nov 07

PERFORMANCE CHARACTERISTICS (continued)

–10

–20

–30

–40

–50

–60

–70

–80

–90

1.8

1.6

1.4

1.3

1.0

0.8

0.6

0.4

0.2

RF INPUT LEVEL (dBm)

Receiver RF Performance — T = 25

°C,

Audio Level = 129mVRMS

–10

–20

–30

–40

–50

–60

–70

–80

–90

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

RF INPUT LEVEL (dBm)

AUDIO

AM REJECTION

THD+N

NOISE

RSSI

Receiver RF Performance — T = –40

°C,

Audio Level = 118mVRMS

–10

–20

–30

–40

–50

–60

–70

–80

–90

–100

–110

RF INPUT POWER (dBm)

Mixer Third Order Intercept and Compression

RF INPUT LEVEL (dBm)

RSSI vs RF Input Level and Temperature

–40

°C

–10

–20

–30

–40

–50

–60

–70

–80

–90

1.8

1.6

1.4

1.2

0.8

0.6

0.4

0.2

Receiver RF Performance – T = 85

°C, Audio Level = 131mVRMS

AUDIO

AM REJECTION

THD+N

NOISE

RSSI

AUDIO

AM REJECTION

THD+N

NOISE

RSSI

1.8

1.6

1.4

1.2

0.8

0.6

0.4

0.2

Temperature (

°C)

–40

–5

–7

–9

–11

–13

–15

–17

–19

–21

–23

–25

5.5V

2.7V

3.0V

RF level = -45 dBm

Mixer IIP3 at 240MHz vs Temperature and Supply Voltage

SR00494

Figure 4. Performance Characteristics

SA636 Datasheet(PDF) 6 Page - NXP Semiconductors

SA636 Datasheet(HTML) 6 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

Datasheet Download

Link URL