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SA636 Datasheet(PDF) 13 Page - NXP Semiconductors |
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SA636 Datasheet(HTML) 13 Page - NXP Semiconductors |
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13 / 17 page ![]() Philips Semiconductors Product specification SA636 Low voltage high performance mixer FM IF system with high-speed RSSI 1997 Nov 07 13 Table 1. DECT Application Circuit Electrical Characteristics RF frequency = 110.592MHz; IF frequency = 9.8MHz; RF level = -45dBm; FM modulation = 100kHz with ±288kHz peak deviation. SYMBOL PARAMETER TEST CONDITIONS TYPICAL UNITS Mixer/Osc section (ext LO = 160mVRMS) PG Conversion power gain 13 dB NF Noise Figure at 110MHz 12 dB IIP3 Third order input intercept Matched f1 = 110.592; f2 = 110.892MHz -15 dBm RIN RF input resistance 690 Ω CIN RF input capacitance 3.6 pF IF section IF amp gain 330 Ω load 38 dB Limiter amp gain 330 Ω load 54 dB Data level RLOAD = 3kΩ 130 mVRMS 3dB data bandwidth 700 kHz RF/IF section (internal LO) System RSSI output RF level = -10dBm 1.4 V System S/N1 RF level = -83dBm 10 dB NOTE: 1. 10dB S/N corresponds to BER = 10-3. RF GENERATOR SPECTRUM ANALYZER SCOPE DC VOLTMETER 110.592MHz RSSI DATA SA636 DEMO BOARD LO / GENERATOR 120.392MHz VCC = 3V SR00502 Figure 11. SA636 Application Circuit Test Set Up NOTES: 1. RF generator: Set your RF generator at 110.592MHz, use a 100kHz modulation frequency and a ±288kHz deviation. 2. Layout: The layout is very critical in the performance of the receiver. We highly recommend our demo board layout. 3. RSSI: The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a measure of the quality of the layout and design. If the lowest RSSI voltage is 500mV or higher, it means the receiver is in regenerative mode. In that case, the receiver sensitivity will be worse than expected. 4. Supply bypass and shielding: All of the inductors, the quad tank, and their shield must be grounded. A 0.1 µF bypass capacitor on the supply pin improves sensitivity. |
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