MCP60711/1U/3

DS20006870A-page 2

 2024 Microchip Technology Inc. and its subsidiaries

1.0

ELECTRICAL CHARACTERISTICS

1.1

Absolute Maximum Ratings †

VDD –VSS ..................................................................................................................................................-0.3V to +6.0V

Current at Input Pins ...............................................................................................................................................±2 mA

Inputs and Outputs................................................................................................................... VSS – 0.5V to VDD +0.5V

Input Difference Voltage (VIN+–VIN-)................................................................................................. (intermittent) ±VDD

................................................................................................(continuous) ±0.5V

Output Short Circuit Current..................................................................................................................................±60 mA

Current at Output and Supply Pins...................................................................................................(continuous) ±30 mA

Storage Temperature...............................................................................................................................-65°C to +150°C

Maximum Junction Temperature ...........................................................................................................................+150°C

ESD Protection (HBM, CDM)

 4kV, 2kV

†Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at those or any other conditions above those indicated

in the operational listings of this specification is not intended. Exposure to maximum rating conditions for extended

periods may affect device reliability.

1.2

Specifications

TABLE 1-1:

DC ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Unless otherwise indicated, TA = 25°C, VDD = 3.5V, VSS = GND, VCM = 0.1V, VOUT =VDD/2,

VL =VDD/2, RL =5kΩ to VL and CL = 30 pF; see Figure 1-6.

Parameters

Sym.

Min.

Typ.

Max. Units

Conditions

Input Offset Voltage

Input Offset Voltage

VOS

-105

±50

105

µV

VCM =0.1V

-150

±75

150

VCM =VDD –0.5V

Input Offset Voltage Aging

ΔVOS

—

±80

—

Dynamic Burn-in, VCM = 0.1V,

1008 hr, 125°C, VDD =5.5V,

|VIN+ – VIN-| < 60 mV

—

±40

—

Dynamic Burn-in, VCM = 0.1V,

1008 hr, 125°C, VDD =5.5V,

|VIN+ – VIN-| < 60 mV

Input Offset Drift with

Temperature

TC1

—±0.4

—

µV/°C TA = -40°C to +125°C, VCM =0.1V

—±0.45

—

TA = -40°C to +125°C, VCM =VDD –0.5V

Input Offset Quadratic

Temp. Co.

TC2

—±1.5

—

nV/°C2 TA = -40°C to +125°C, VCM =0.1V

—±2.1

—

TA = -40°C to +125°C, VCM =VDD –0.5V

Power Supply Rejection Ratio

PSRR

80

95

—

dB

VDD = 2.2V to 5.5V, VCM =0.1V

76

92

—

VDD = 2.2V to 5.5V, VCM =VDD –0.5V

Input Current and Impedance

Input Bias Current

IB

-20

±0.4

20

pA

VDD = 5.5V, VCM = 2.75V, TA= 25°C

—40

—

VDD = 5.5V, VCM = 2.75V, TA= +85°C

—420

—

VDD = 5.5V, VCM = 2.75V, TA= +125°C

Input Offset Current

IOS

-20

±1

20

VDD = 5.5V, VCM = 2.75V, TA= +25°C

—±10

—

VDD = 5.5V, VCM = 2.75V, TA= +85°C

-400

±180

400

VDD = 5.5V, VCM = 2.75V, TA= +125°C

Common Mode Input

Impedance

ZCM

—1011||6.5

—

Ω||pF

Differential Mode Input

Impedance

ZDM

—1011||2.4

—

Note 1:

VCML, VCMH, VOL and VOH change with temperature; see Figure 2-19 and Figure 2-21.

2:

The POR must be on for the time tPON_TR before SHDN function is enabled; it is disabled when the POR is off.