QPA1017D

5.7 – 7 GHz 50 Watt GaN Power Amplifier

Data Sheet Rev. B, May 2021 | Subject to change without notice

2 of 29

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®

Recommended Operating Conditions

Parameter

Min

Typ.

Max Units

Drain Voltage (VD)

+24

+28

V

Drain Current, Quiescent (IDQ)

1.5

A

Drain Current, RF (ID_Drive)

See chart page 4, 6

A

Gate Voltage Typ. Range (VG)

−2 to -2.9

V

Gate Current, RF (IG_Drive)

See chart page 4, 6 mA

Operating Temp. Range (TBASE)

−40

+85

ºC

Electrical

specifications

are

measured

at

specified

test

conditions.

Specifications are not guaranteed over all

recommended operating conditions.

Absolute Maximum Ratings

Parameter

Value / Range

Drain Voltage (VD)

29.5 V

Gate Voltage Range (VG)

-6 V to 0 V

Drain Current (ID)

10 A

Gate Current (IG)

See plot page 20

Power Dissipation (PDISS), 85 °C

Pulsed, 180 W

CW, 100 W

Input Power (PIN), Pulsed and CW,

50 Ω, VD = 24 V, IDQ = 1.5 A, TBASE =

85 °C,

32 dBm*

Input Power (PIN), Pulsed and CW,

3:1 VSWR, VD = 24 V, IDQ = 1.5 A ,

TBASE = 85 °C

32 dBm*

Mounting Temperature (30 seconds)

320 ºC

Storage Temperature

-55 to +150 ºC

Operation of this device outside the parameter ranges given

above may cause permanent damage. These are stress ratings

only, and functional operation of the device at these conditions

is not implied.

* Robustness guaranteed over 5.7-7.0 GHz.

Out of band

operation not recommended

Electrical Specifications

Parameter

Conditions (1) (2)

Min

Typ.

Max

Units

Operational Frequency Range

5.7

7

GHz

Output Power at Saturation, PSAT

PIN = +26 dBm, Pulsed

47

dBm

Large Signal Gain

PIN = +26 dBm, Pulsed

22

dB

Small Signal Gain, S21

CW

28

dB

Input Return Loss, IRL

CW

8

dB

Output Return Loss, ORL

CW

5

dB

3RD Intermodulation Products, IM3

POUT/Tone = 41 dBm; Freq. = 5.7, 6.4, 7 GHz;

Δf = 20 MHz, CW

-25

dBc

5TH Intermodulation Products, IM5

POUT/Tone = 41 dBm; Freq. = 35 GHz;

Δf = 20 MHz, CW

-35

dBc

PSAT Temperature Coefficient

TDIFF =

−40 ºC to +85 ºC; PIN = +26 dBm,

Pulsed

-0.007

dBm/ºC

S21 Temperature Coefficient

TDIFF =

−40 ºC to +85 ºC, CW

-0.065

dB/ºC

Notes:

1.

Test conditions unless otherwise noted: Pulsed VD = +24 V, IDQ = 1.5 A, VG = -2.5V +/- typical, DC = 20%, PW = 150 us,

TBASE

 = +25 ºC, Z0 = 50 Ω

2.

TBASE is back side of 40 mil CuMo carrier plate with AuSn solder