MPQ18913

– 30V, 0.3A High Frequency Transformer Driver

PRELIMINARY SPECIFICATIONS SUBJECT TO CHANGE

MPQ18913 Rev. 0.8

MonolithicPower.com

3

12/8/2021

MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.

Preliminary Specifications Subject to Change

© 2021 MPS. All Rights Reserved.

PIN FUNCTIONS

Package

Pin #

Name

Description

1

FLT

Fault Indicator. FLT pin is an open-drain output.

2

EN/SYNC

Enable/External Clock. Pull high to enable MPQ18913, pull low to disable MPQ18913.

Apply external clock to sync switching frequency.

3

VIN

Input Voltage. Bypass VIN to GND with a 1µF ceramic capacitor as close as possible to

the IC.

4

GND

Ground.

5

AGND

Analog Ground. Connect to power GND through single point connection.

6

VCC

Bias Supply. Decouple with 1µF or larger ceramic capacitor referred to GND. Place the

capacitor as close as possible.

7

SW

Switch Node.

8

BST

Drive Voltage for HS FET. Connect a ceramic capacitor from this pin to SW.

9

NC

Please float NC pin. For internal test use only.

10

FREQ

Switching Frequency set pin. Connect a resistor from FREQ to GND. Place the resistor

as close as possible.

ABSOLUTE MAXIMUM RATINGS (1)

VIN, EN ......................................... -0.3V to 35V

VSW ..................................... -0.3V to (VIN+0.3V)

BST-VSW ....................................... -0.3V to 6.5V

VCC, VDET, VFLT, VFREQ .................. -0.3V to 6.5V

VIN, EN (surge) ............................. -0.3V to 50V

Junction Temperature .............................. 150°C

Lead Temperature ................................... 260°C

Storage Temperature............... -65°C to +150°C

Continuous Power Dissipation (TA = +25°C) (2)

QFN-10 (2mmx2.5mm) .............................2.5W

ESD Rating

Human-body model (HBM) ....................±2000V

Charged-device model (CDM) ...............±2000V

Recommended Operating Conditions (3)

Input Voltage VIN............................... 5V to 30V

External VCC Bias ....................... 4.86V to 5.5V

Junction Temp. (TJ).................. -40°C to +150°C

Thermal Resistance

θJA

θJC

EVQ-18913-D-00A (4)

……..45.3..........7..... °C/W

QFN-10 (2mmx2.5mm) (5)....70.........2.3.... °C/W

Notes:

1) Exceeding these ratings may damage the device.

2) The maximum allowable power dissipation is a function of the

maximum junction temperature TJ (MAX), the junction-to-

ambient thermal resistance θ

JA, and the ambient temperature

TA. The maximum allowable continuous power dissipation at

any ambient temperature is calculated by PD (MAX) = (TJ

(MAX)-TA)/θJA. Exceeding the maximum allowable power

dissipation will cause excessive die temperature, and the

regulator will go into thermal shutdown. Internal thermal

shutdown circuitry protects the device from permanent

damage.

3) The device is not guaranteed to function outside of its operating

conditions.

4) Measured on EVQ18913-D-00A, 6-layer PCB

5) Measured on JESD51-7, 4-layer PCB. The value of

θ

JA given

in this table is only valid for comparison with other packages

and cannot be used for design purposes. These values were

calculated in accordance with JESD51-7, and simulated on a

specified JEDEC board. They do not represent the

performance obtained in an actual application.