Data Sheet

ADPA9007

DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier

Rev. 0

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FEATURES

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Wideband, internally-matched, RF power amplifier

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DC-coupled input and output

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Integrated RF power detector

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Integrated temperature sensor

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Gain: 12.5 dB typical at 2 GHz to 16 GHz

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OP1dB: 33 dBm typical at 2 GHz to 16 GHz

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PSAT: 34 dBm typical at 2 GHz to 16 GHz

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OIP3: 45 dBm typical at 2 GHz to 16 GHz

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32-Lead, 5.00 mm × 5.00 mm, LFCSP_CAV package

APPLICATIONS

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Electronic warfare

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Radar

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Test and measurement equipment

GENERAL DESCRIPTION

The ADPA9007 is a 2 W, RF power amplifier that operates from

DC to 28 GHz. The RF input and output are internally-matched and

DC-coupled. The ADPA9007 includes an integrated temperature-

compensated RF power detector and an integrated temperature

sensor.

The ADPA9007 amplifier provides a gain of 12.5 dB, an output

power for 1 dB compression (OP1dB) of 33 dBm, and an output

third-order intercept (OIP3) of 45 dBm from 2 GHz to 16 GHz. The

amplifier operates from a typical supply voltage of 15 V and has a

500 mA typical quiescent bias current, which is adjustable.

The ADPA9007 is fabricated on a gallium arsenide (GaAs), pseu-

domorphic high electron mobility transistor (pHEMT) process. The

amplifier is housed in an RoHS-compliant, 32-Lead, 5 mm × 5 mm,

lead frame chip scale package, premolded cavity [LFCSP_CAV]

and is specified for operation from −40°C to +85°C.

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram