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ADPA9007 Datasheet(PDF) 23 Page - Analog Devices

Part # ADPA9007
Description  DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier
PDF  28 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADPA9007 Datasheet(HTML) 23 Page - Analog Devices

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Data Sheet
ADPA9007
APPLICATIONS INFORMATION
analog.com
Rev. 0 | 23 of 28
Figure 84 shows the basic connections for operating the AD-
PA9007. The RFIN and the RFOUT/VDD pins require external
AC-coupling capacitors. The drain bias is applied through a bias
tee on the RFOUT/VDD pin. The nominal drain bias is 15 V.
The negative gate current is applied to the VGG1 pin. A VGG1 of
approximately −0.7 V sets the drain current to 500 mA.
The VDET and VREF pins are connected to 5 V through 40.2 kΩ
biasing resistors to bias internal circuits. Figure 84 shows an option-
al op amp differential amplifier circuit that can be used to subtract
VDET from VREF, yielding a temperature-compensated voltage that
is proportional to the RF output power.
The configuration shown in Figure 84 was used to characterize the
device with the exception of the op-amp circuit. VDET and VREF
were measured at their respective pins with just the two 40.2 kΩ
biasing resistors attached.
Figure 84. Basic Connections
POWER-UP SEQUENCING
The following power-up sequencing in recommended:
1. Connect GND to ground.
2. Set VGG1 to −1.5 V.
3. Set RFOUT/VDD to 15 V.
4. Increase VGG1 to achieve an IDQ = 500 mA.
5. Apply the RF signal.
If the desired gate voltage is known, set the VGG1 directly in Step 2
and skip Step 4.
POWER-DOWN SEQUENCING
The following power-down sequencing is recommended.
1. Turn off the RF signal.
2. Decrease VGG1 to −1.5 V to achieve an IDQ = 0 mA.
3. Decrease VDD to 0 V.
4. Increase VGG1 to 0 V.



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