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AD52010 Datasheet(PDF) 5 Page - Elite Semiconductor Memory Technology Inc. |
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AD52010 Datasheet(HTML) 5 Page - Elite Semiconductor Memory Technology Inc. |
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5 / 15 page ![]() ESMT AD52010 Elite Semiconductor Microelectronics Technology Inc. Publication Date: Nov. 2021 Revision: 1.2 5/15 General Electrical Characteristics (TA=25℃) SYMBOL PARAMETER CONDITION MIN TYP MAX UNIT Iq Operating current VDD=SDN=5V, Output switching 6 mA IPD Supply current during power-down mode VDD=5.5V; SDN=0V <1 Voffset Output offset voltage Input ac grounded, VDD=2.5V ~ 5.5V < 1 5 mV Tsd Junction temperature for driver shutdown 165 oC Thys Temperature hysteresis for recovery from shutdown 20 oC fsw Switching rate of loudspeakers driver 250 300 350 kHz AV Gain in R k 270 in R k 300 in R k 330 V/V Ton Turn-on time VDD = 3.6 V 1.7 4 msec RSC Loudspeaker short-circuit detect resistance VDD = 5.0 V 2.8 3.2 Ohm |
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