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INA849 Datasheet(PDF) 9 Page - Texas Instruments |
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INA849 Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 40 page ![]() 6.6 Typical Characteristics (continued) at TA = 25°C, VS = VSOUT = ±15V, VICM = VREF = 0V, RL = 10kΩ connected to ground, and G =1V/V (unless otherwise noted) Offset Voltage Drift (µV/°C) 0 5 10 15 20 -8 -4 0 4 8 N = 58 Mean = –1.23μV/°C Std. dev. = 2μV/°C G = 0.125V/V Figure 6-7. Distribution of Offset Voltage Drift (RTI) Input-referenced offset voltage drift (µV/°C) 0 5.5 11 16.5 22 -1 -0.5 0 0.5 1 N = 58 Mean = –0.14μV/°C Std. dev. = 0.26μV/°C G = 1V/V Figure 6-8. Distribution of Offset Voltage Drift (RTI) Input-referenced offset voltage drift (µV/°C) 0 5 10 15 20 25 -1 -0.5 0 0.5 1 N = 58 Mean = –0.17μV/°C Std. dev. = 0.13μV/°C G = 16V/V Figure 6-9. Distribution of Offset Voltage Drift (RTI) Typical unit shown . Figure 6-10. Offset Voltage (RTI) vs VICM Power Supply Rejection Ratio ( V/V) 0 10 20 30 40 50 -4 -3 -2 -1 0 1 2 3 4 N = 1767 Mean = 0.11μV/V Std. dev. = 0.47μV/V G = 0.125V/V Figure 6-11. PSRR Distribution N = 1767 Mean = 0.14μV/V Std. dev. = 0.09μV/V G = 1V/V Figure 6-12. PSRR Distribution www.ti.com PGA849 SBOSAG3A – MARCH 2024 – REVISED DECEMBER 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 9 Product Folder Links: PGA849 |
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