5

ISO7840, ISO7840F

www.ti.com

SLLSEN2B – JULY 2015 – REVISED APRIL 2016

Product Folder Links: ISO7840 ISO7840F

Submit Documentation Feedback

Copyright © 2015–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values except differential I/O bus voltages are with respect to the local ground terminal (GND1 or GND2) and are peak

voltage values.

(3)

Maximum voltage must not exceed 6 V

6 Specifications

6.1 Absolute Maximum Ratings

See

(1)

MIN

MAX

UNIT

VCC1,

VCC2

Supply voltage(2)

–0.5

6

V

Voltage

INx

–0.5

VCCX + 0.5

(3)

V

OUTx

–0.5

VCCX + 0.5

(3)

EN2

–0.5

VCCX + 0.5

(3)

IO

Output current

–15

15

mA

Surge immunity

12.8

kV

Tstg

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)

±6000

V

Charged device model (CDM), per JEDEC specification JESD22-C101, all

pins(2)

±1500

(1)

VCCI = Input-side VCC; VCCO = Output-side VCC.

(2)

To maintain the recommended operating conditions for TJ, see Thermal Information.

6.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

VCC1,

VCC2

Supply voltage

2.25

5.5

V

IOH

High-level output current

VCCO

(1) = 5 V

–4

mA

VCCO

(1) = 3.3 V

–2

VCCO

(1) = 2.5 V

–1

IOL

Low-level output current

VCCO

(1) = 5 V

4

mA

VCCO

(1) = 3.3 V

2

VCCO

(1) = 2.5 V

1

VIH

High-level input voltage

0.7 × VCCI

(1)

VCCI

(1)

V

VIL

Low-level input voltage

0

0.3 × VCCI

(1)

V

DR

Signaling rate

0

100

Mbps

TJ

Junction temperature(2)

–55

150

°C

TA

Ambient temperature

–55

25

125

°C