L9678P datasheet(189/215 Pages) STMICROELECTRONICS

189 / 215 page

DS11626 Rev 9

189/216

L9678P, L9678P-S

Electrical characteristics

214

16.16

Deployment drivers

All electrical characteristics are valid for the following conditions unless otherwise noted.

-40 °C  Ta  +95 °C, VINGOOD1(max)  VIN  35 V, 6 V  SSxy  35 V, SSxy - SFx  25 V.

Table 47. Deployment drivers - DC specifications

N°

Symbol

Parameter

Condition

Min.

Typ. Max. Unit

IDEPL_LO

Deployment

current

R = 2 ohms

Considering 9mA as not

detected leakage with a 1kOhm

equivalent resistance from SFx

to GND

1.33

1.4

1.55

IDEPL_HI

R = 2 ohms, 9 V  SSxy

Considering 13.5 mA as not

detected leakage with a 1 kΩ

equivalent resistance from SFx

to GND, Not available with tdepl

= 2 ms selection

1.94

1.99

2.2

IOC_SR

Low side over

current detection -

2.2

3.1

ILIM_SR

Low side current

limitation

2.2

3.1



ILIM_OC_SR

Difference

between current

limitation and OC

threshold

ILIM_SR - IOC_SR

0.1

RDSONT

Total high and

low side MOS on

resistance

Ta = 95 °C

IRV_SF

Reverse current

on SFx

Without device malfunction (1)

Not to be tested in series

production

-100

ILKG_SS_OFF

SSxy leakage

current

Device OFF

SSxy ≤ 35V

SFx = SFy = 0

-10

µA

ILKG_SS_ON

Device ON

SSxy ≤ 35V

SFx = 0

µA

10 ILKG_SS_CH_ARMED

Device ON

One channel armed

SSxy ≤ 35V

SFx = 0

410

490

570

µA

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