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L9678P Datasheet(PDF) 194 Page - STMicroelectronics |
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L9678P Datasheet(HTML) 194 Page - STMicroelectronics |
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194 / 215 page  Electrical characteristics L9678P, L9678P-S 194/216 DS11626 Rev 9 16.17.3 High/low side FET test All electrical characteristics are valid for the following conditions unless otherwise noted. -40 °C Ta +95 °C, VINGOOD1(max) VIN 35 V, 6 V SSxy 35 V, 7V VRESDIAG 35V. 5 RLKG_BSQ_TH Detection threshold, leakage to BATTERY Leakage detected if LKG_BSQ 1 kΩ and not detected if RLKG_BSQ 10 kΩ Design Info 1 - 10 kΩ 6 ILKG_BSQ_TH Equivalent to resistance range -15% 1.8 +15% mA 7 ILIM_VRCM_SRC VRCM current limitation - -20 - -10 mA 8 ILIM_VRCM_SINK - 10 - 20 mA 9 VSHIFT External ground or battery shift Design Info -1 - 1 V 10 RSQ_LOW_TH Detection Threshold for “resistance too low” Design Info 200 - 500 Ω 11 IRSQ_LOW_TH Equivalent to resistance range -12% 6 +12% mA 12 RSQ_HIGH_TH Detection threshold for “resistance too high” Design Info 2 - 5 kΩ 13 IRSQ_HIGH_TH Equivalent to resistance range -15% 700 +15% µA 14 TFLT_LKG Leakage test deglitch filter time - 8 µs Table 50. Squib/pyroswitch leakage test (VRCM) (continued) N° Symbol Parameter Condition Min. Typ. Max. Unit Table 51. High/low side FET test N° Symbol Parameter Condition Min. Typ. Max. Unit 1 IHS_FET_TH Detection threshold (HS FET test) - -10% 1.8 +10% mA 2 ILS_FET_TH Detection threshold low side FET test - -10% 450 +10% µA 3 EFET_TESt Energy transferred to squib/pyroswitch during HS/LS FET tests Design Info - - 170 µJ 4 TFLT_HS_FET_TH TFLT_LS_FET_TH FET Test deglitch filter time - 1.3 1.5 1.7 µs 5 TFETTIMEOUT HS/LS FET test time-out - 190 200 210 µs 6 SGxy_OPEN Squib/pyroswitch open ground detection GNDSUBx as ground reference 300 450 600 mV 7 TFLT_SGOPEN Squib/pyroswitch open ground detection filter time - 46 50 54 µs |
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