5

INA828

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SBOS792A – AUGUST 2017 – REVISED JANUARY 2018

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Copyright © 2017–2018, Texas Instruments Incorporated

(1)

Total offset, referred-to-input (RTI): VOS = (VOSI) + (VOSO / G).

(2)

Offset drifts are uncorrelated. Input-referred offset drift is calculated using: ΔVOS(RTI) = √[ΔVOSI

2 + (ΔV

OSO / G)

2]

(3)

Specified by characterization.

(4)

Input voltage range of the INA828 input stage. The input range depends on the common-mode voltage, differential voltage, gain, and

reference voltage. See Typical Characteristic curves Figure 48 through Figure 51 for more information.

(5)

Total RTI voltage noise is equal to: eN(RTI) = √[eNI

2 + (e

NO / G)

2]

(6)

The values specified for G > 1 do not include the effects of the external gain-setting resistor, RG.

6.5 Electrical Characteristics

at TA = 25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, and G = 1 (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT

VOSI

Input stage offset

voltage(1)(2)

G = 100, RTI

20

50

µV

TA = –40°C to +125°C

(3)

90

µV

vs temperature, TA = –40°C to +125°C

0.5

µV/°C

VOSO

Output stage offset

voltage(1)(2)

G = 1, RTI

50

250

µV

TA = –40°C to +125°C

(3)

500

µV

vs temperature, TA = –40°C to +125°C

5

µV/°C

PSRR

Power-supply rejection

ratio

G = 1, RTI

110

120

dB

G = 10, RTI

114

130

G = 100, RTI

130

135

G = 1000, RTI

136

140

zid

Differential impedance

100 || 1

GΩ || pF

zic

Common-mode impedance

100 || 10

GΩ || pF

RFI filter, –3-dB frequency

53

MHz

VCM

Operating input range(4)

(V–) + 2

(V+) – 2

V

VS = ±2.25 V to ±18 V, TA = –40°C to +125°C

See Figure 48 to Figure 51

Input overvoltage range

TA = –40°C to +125°C

±40

V

CMRR

Common-mode rejection

ratio

At dc to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V,

G = 1

90

100

dB

At dc to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V,

G = 10

110

120

At dc to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V,

G = 100

130

140

At dc to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V,

G = 1000

140

145

BIAS CURRENT

IB

Input bias current

VCM = VS / 2

0.15

0.6

nA

TA = –40°C to +125°C

2

IOS

Input offset current

VCM = VS / 2

0.15

0.6

nA

TA = –40°C to +125°C

2

NOISE VOLTAGE

eNI

Input stage voltage

noise(5)

f = 1 kHz, G = 100, RS = 0 Ω

7

nV/

√Hz

fB = 0.1 Hz to 10 Hz, G = 100, RS = 0 Ω

0.14

µVPP

eNO

Output stage voltage

noise(5)

f = 1 kHz, RS = 0 Ω

90

nV/

√Hz

fB = 0.1 Hz to 10 Hz, RS = 0 Ω

7.7

µVPP

In

Noise current

f = 1 kHz

170

fA/

√Hz

fB = 0.1 Hz to 10 Hz, G = 100

4.7

pAPP

GAIN

G

Gain equation

1 + (50 kΩ / RG)

V/V

Range of gain

1

1000

V/V

GE

Gain error

G = 1, VO = ±10 V

±0.005%

±0.025%

G = 10, VO = ±10 V

±0.025%

±0.15%

G = 100, VO = ±10 V

±0.025%

±0.15%

G = 1000, VO = ±10 V

±0.05%

Gain vs temperature(6)

G = 1, TA = –40°C to +125°C

±5

ppm/°C

G > 1, TA = –40°C to +125°C

±50