5.6 Electrical Characteristics VS = 5 V Single Supply

at TA = 25°C, VS = 5 V, RL = 10 kΩ, VREF = 0 V, VCM = VS / 2, and G = 0.1 (unless otherwise noted)

PARAMETER

TEST CONDITIONS

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT

VOS

Offset voltage, VO

RTI, VCM = 0 V

±3

±10

mV

Offset voltage, VO1

RTI, VCM = 0 V

±1

mV

Offset voltage drift

RTI, TA = –40℃ to 85℃

±10

µV/°C

PSRR

Power-supply rejection

ratio

RTI, VS = ±1.35 V to ±18 V

±100

±600

µV/V

VCM

Common-mode voltage (1) VIN = 0 V

–25

19

V

CMRR

Common-mode voltage

rejection

VCM = –25 V to 19 V, RS = 0 Ω

70

80

dB

TA = –40℃ to 85℃

64

74

Differential input

impedance

Non-inverting input

110

kΩ

Inverting input

91.7

Common-mode input

impedance

55

kΩ

BIAS CURRENT

IB

Bias Current

VCM = VS / 2

±50

nA

IOS

Offset Current

VCM = VS / 2

±5

nA

NOISE

eN

Voltage noise

RTO, fB = 0.1 Hz to 10 Hz

12

µVPP

RTO, f = 1 kHz

550

nV/√Hz

GAIN

Gain

0.1

100

V/V

GE

Gain error

VO = 0.15 V to 4 V, RL = 100 kΩ

±0.025

±0.1

%

VO = 0.3 V to 3.75 V, RL = 10 kΩ

±0.025

±0.1

Gain error drift(2)

TA = –40°C to 85°C

VO = 0.25 V to 4 V, RL = 100

kΩ

±1

±10

ppm/°C

VO = 0.5 V to 3.75 V, RL =

10 kΩ

±1

±10

Gain nonlinearity

VO = 0.3 V to 3.75 V

±0.001

±0.01 % of FSR

OUTPUT

Output voltage

RL = 100 kΩ

0.15

4

V

TA = –40℃ to 85℃

0.25

4

RL = 10 kΩ

0.3

3.75

TA = –40℃ to 85℃

0.5

3.75

CL

Load capacitance

Stable operation

1

nF

ISC

Short-circuit current

Continuous to VS / 2

±15

mA

FREQUENCY RESPONSE

BW

Bandwidth, –3 dB

G = 0.1

550

kHz

G = 1

50

SR

Slew rate

0.3

V/µs

tS

Settling time

To 0.1%,

VO = 10 V-step

40

µs

To 0.01%

VO = 10 V-step

80

Overload recovery

50% input overload

40

µs

POWER SUPPLY

IQ

Quiescent current

VIN = 0 V

±570

±700

µA

TA = –40℃ to 85℃

±750

(1)

Input common-mode voltage varies with output voltage; see Typical Characteristics.

(2)

Specified by wafer test.

INA146

SBOS109A – SEPTEMBER 1999 – REVISED NOVEMBER 2023

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