ONET1130EC datasheet(5/64 Pages) TI2

5 / 64 page

ONET1130EC

www.ti.com

SLLSEJ3A – JUNE 2015 – REVISED JULY 2015

7 Specifications

7.1 Absolute Maximum Ratings

(1) (2)

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Supply voltage

at VCC_TX, VCC_RX, VDD

–0.5

at 3.3-V tolerant pins LOL, SDA, SCK, RX_LOS, RX_DIS,

–0.5

3.6

TX_FLT, TX_DIS

Voltage

at all other pins MONB, TXIN+, TXIN–, PD, MONP, TX_LF,

BIAS, TXOUT–, TXOUT+, AMP, RXIN+, RXIN–, COMP,

–0.5

RX_LF, RXOUT–, RXOUT+,

Maximum current at transmitter input pins TXIN+, TXIN–

Maximum current at transmitter output

TXOUT+, TXOUT–

125

pins

Maximum current at receiver input pins

RXIN+, RXIN–

Maximum current at receiver output pins

RXOUT+, RXOUT–

Maximum junction temperature, TJ

125

°C

Storage temperature, Tstg

–65

150

°C

(1)

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating

conditions” is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

(2)

All voltage values are with respect to network ground terminal.

7.2 ESD Ratings

VALUE

UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

Electrostatic

V(ESD)

discharge

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±750

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

TYP

MAX

UNIT

VCC

Supply Voltage

2.37

2.5

2.63

VIH

Digital input high voltage

TX_DIS, RX_DIS, SCK, SDA, 3.3-V tolerant IOs

VIL

Digital input low voltage

0.8

Control bit TXPDRNG = 1x, step size = 3 µA

3080

Photodiode current range

Control bit TXPDRNG = 01, step size = 1.5 µA

1540

µA

Control bit TXPDRNG = 00, step size = 0.75 µA

770

TXCDR_DIS = 0 and RXCDR_DIS = 0

9.8

11.7

Serial Data rate

Gbps

TXCDR_DIS = 1 and RXCDR_DIS = 1

11.7

VAMP

Amplitude control input voltage range

tR-IN

Input rise time

20%–80%

tF-IN

Input fall time

20%–80%

Temperature at thermal pad

–40

100

°C

Submit Documentation Feedback

Product Folder Links: ONET1130EC

ONET1130EC Datasheet(PDF) 5 Page - Texas Instruments

ONET1130EC Datasheet(HTML) 5 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64

Datasheet Download

Link URL