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OPA333 Datasheet(PDF) 12 Page - Texas Instruments

Part # OPA333
Description  OPA333-Q1 Automotive, 1.8-V, Micropower, CMOS, Zero-Drift Operational Amplifier
PDF  27 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

OPA333 Datasheet(HTML) 12 Page - Texas Instruments

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Input Voltage (V)
0
0.5
1
1.5
0
0.025
0.05
0.1
Load
0.075
2
D001
12
OPA333-Q1
SBOS522A – JUNE 2010 – REVISED NOVEMBER 2019
www.ti.com
Product Folder Links: OPA333-Q1
Submit Documentation Feedback
Copyright © 2010–2019, Texas Instruments Incorporated
Typical Applications (continued)
8.2.1.1 Design Requirements
The design requirements are as follows:
•
Supply voltage: 5 V dc
•
Input: 0 V to 2 V dc
•
Output: 0 mA to 100 mA dc
8.2.1.2 Detailed Design Procedure
The V-I transfer function of the circuit is based on the relationship between the input voltage, VIN, and the three
current sensing resistors, RS1, RS2, and RS3. The relationship between VIN and RS1 determines the current that
flows through the first stage of the design. The current gain from the first stage to the second stage is based on
the relationship between RS2 and RS3.
For a successful design, pay close attention to the dc characteristics of the operational amplifier chosen for the
application. To meet the performance goals, this application benefits from an operational amplifier with low offset
voltage, low temperature drift, and rail-to-rail output. The OPA2333-Q1 CMOS operational amplifier is a high-
precision, 5-µV offset, 0.05-μV/°C drift amplifier optimized for low-voltage, single-supply operation with an output
swing to within 50 mV of the positive rail. The OPA2333-Q1 uses chopping techniques to provide low initial offset
voltage and near-zero drift over time and temperature. Low offset voltage and low drift reduce the offset error in
the system, making these devices appropriate for precise dc control. The rail-to-rail output stage of the
OPA2333-Q1 makes sure that the output swing of the operational amplifier is able to fully control the gate of the
MOSFET devices within the supply rails.
A detailed error analysis, design procedure, and additional measured results are given in the High-Side V-I
Converter reference design.
8.2.1.3 Application Curve
Figure 21. Measured Transfer Function for High-Side V-I Converter



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