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OPA855 Datasheet(PDF) 19 Page - Texas Instruments

Part # OPA855
Description  OPA859 1.8GHz Unity-Gain Bandwidth, 3.3nV/√Hz, FET Input Amplifier
PDF  36 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

OPA855 Datasheet(HTML) 19 Page - Texas Instruments

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8.3.4 Slew Rate and Output Stage
In addition to wide bandwidth, the OPA859 features a high slew rate of 1150 V/µs. The slew rate is a
critical parameter in high-speed pulse applications with narrow sub-10-ns pulses, such as optical time-domain
reflectometry (OTDR) and LIDAR. The high slew rate of the OPA859 implies that the device accurately
reproduces a 2-V, sub-ns pulse edge; see also Figure 6-20. The wide bandwidth and slew rate make the
OPA859 an excellent amplifier for high-speed signal-chain front ends.
Figure 8-7 shows the open-loop output impedance of the OPA859 as a function of frequency. To achieve
high slew rates and low output impedance across frequency, the output swing of the OPA859 is limited to
approximately 3 V. The OPA859 is typically used in conjunction with high-speed pipeline ADCs and flash ADCs
that have limited input ranges. Therefore, the OPA859 output swing range coupled with the class-leading voltage
noise specification for a CMOS amplifier maximizes the overall dynamic range of the signal chain.
Frequency (Hz)
0
2
4
6
8
10
12
14
16
18
20
10k
100k
1M
10M
100M
1G
10G
D601
Figure 8-7. Open-Loop Output Impedance (ZOL) vs Frequency
8.3.5 Current Noise
The input impedance of CMOS and JFET input amplifiers at low frequencies exceed several GΩs. However,
at higher frequencies, the transistors parasitic capacitance to the drain, source, and substrate reduces the
impedance. The high impedance at low frequencies eliminates any bias current and the associated shot noise.
At higher frequencies, the input current noise increases (see Figure 8-8) as a result of capacitive coupling
between the CMOS gate oxide and the underlying transistor channel. This phenomenon is a natural artifact of
the construction of the transistor and is unavoidable.
Frequency (Hz)
1k
10k
100k
1M
10M
100M
1G
1p
10p
100p
100f
10f
1f
D607
Figure 8-8. Input Current Noise (IBN and IBI) vs Frequency
www.ti.com
OPA859
SBOS852A – SEPTEMBER 2018 – REVISED MAY 2025
Copyright © 2025 Texas Instruments Incorporated
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Product Folder Links: OPA859



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