6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

VS

Total supply voltage (VS+ – VS– )

5.5

V

VIN+, VIN–

Input voltage

(VS–) – 0.5

(VS+) + 0.5

V

VID

Differential input voltage

1

V

VOUT

Output voltage

(VS–) – 0.5

(VS+) + 0.5

V

IIN

Continuous input current

±10

mA

IOUT

Continuous output current(2)

±100

mA

TJ

Junction temperature

150

°C

TA

Operating free-air temperature

–40

125

°C

Tstg

Storage temperature

–65

150

°C

(1)

Operation outside the Absolute Maximum Ratings can cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If

used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device can not be fully functional,

and this can affect device reliability, functionality, performance, and shorten the device lifetime.

(2)

Long-term continuous output current for electromigration limits.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/

JEDEC JS-001(1)

±1000

V

Charged-device model (CDM), per JEDEC

specification JESD22-C101(2)

±1500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VS

Total supply voltage (VS+ – VS– )

3.3

5

5.25

V

TA

Operating free-air temperature

–40

125

°C

6.4 Thermal Information

THERMAL METRIC(1)

OPA859

UNIT

DSG (WSON)

8 PINS

RθJA

Junction-to-ambient thermal resistance

80.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

100

°C/W

RθJB

Junction-to-board thermal resistance

45

°C/W

ΨJT

Junction-to-top characterization parameter

6.8

°C/W

ΨJB

Junction-to-board characterization parameter

45.2

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

22.7

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

www.ti.com

OPA859

SBOS852A – SEPTEMBER 2018 – REVISED MAY 2025

Copyright © 2025 Texas Instruments Incorporated

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