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TPS2552, TPS2553, TPS2552-1, TPS2553-1

SLVS841F – NOVEMBER 2008 – REVISED AUGUST 2016

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Product Folder Links: TPS2552 TPS2553 TPS2552-1 TPS2553-1

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Copyright © 2008–2016, Texas Instruments Incorporated

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

(3)

Surges per EN61000-4-2. 1999 applied to output terminals of EVM. These are passing test levels, not failure threshold.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged device model (CDM), per JEDEC specification JESD22-

C101(2)

±500

IEC 61000-4-2 contact discharge(3)

±8000

IEC 61000-4-2 air-gap discharge(3)

±15000

(1)

See Power Dissipation and Junction Temperature for details on how to calculate maximum junction temperature for specific applications

and packages.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VIN

Input voltage, IN

2.5

6.5

V

VEN

Enable voltage

TPS2552/52-1

0

6.5

V

VEN

Enable voltage

TPS2553/53-1

0

6.5

V

VIH

High-level input voltage on EN or EN

1.1

V

VIL

Low-level input voltage on EN or EN

0.66

IOUT

Continuous output current,

OUT

–40 °C

≤ TJ ≤ 125 °C

0

1.2

A

–40 °C

≤ TJ ≤ 105 °C

0

1.5

RILIM

Current-limit threshold resistor range (nominal 1%) from ILIM to GND

15

232

kΩ

IO

Continuous FAULT sink current

0

10

mA

Input de-coupling capacitance, IN to GND

0.1

µF

TJ

Operating virtual junction

temperature(1)

IOUT ≤ 1.2 A

–40

125

°C

IOUT ≤ 1.5 A

–40

105

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC(1)

TPS2552

TPS2553

UNIT

DBV (SOT-23)

DRV (WSON)

DBV (SOT-23)

DRV (WSON)

6 PINS

6 PINS

6 PINS

6 PINS

RθJA

Junction-to-ambient thermal resistance

182.6

72

182.6

72

°C/W

RθJC(to

p)

Junction-to-case (top) thermal resistance

122.2

85.3

122.2

85.3

°C/W

RθJB

Junction-to-board thermal resistance

29.4

41.3

29.4

41.3

°C/W

ψJT

Junction-to-top characterization parameter

20.8

1.7

20.8

1.7

°C/W

ψJB

Junction-to-board characterization parameter

28.9

41.7

28.9

41.7

°C/W

RθJC(b

ot)

Junction-to-case (bottom) thermal resistance

—

11.1

—

11.1

°C/W