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TPS79225DBVR Datasheet(PDF) 16 Page - Texas Instruments

Part # TPS79225DBVR
Description  TPS792 Ultra-Low Noise, High-PSRR, Fast RF, 100mA, Low-Dropout Linear Regulator
PDF  38 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

TPS79225DBVR Datasheet(HTML) 16 Page - Texas Instruments

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6.3.5 Thermal Protection
Thermal protection disables the output when the junction temperature rises to approximately 165°C, allowing
the device to cool. When the junction temperature cools to approximately 140°C, the output circuitry is again
enabled. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection
circuit may cycle on and off. This cycling limits regulator dissipation, protecting the device from damage as
a result of overheating. Any tendency to activate the thermal protection circuit indicates excessive power
dissipation or an inadequate heatsink. For reliable operation, junction temperature must be limited to 125°C
maximum. To estimate the margin of safety in a complete design (including heatsink), increase the ambient
temperature until the thermal protection is triggered; use worst-case loads and signal conditions.
The TPS792xx internal protection circuitry is designed to protect against overload conditions. This circuitry is
not intended to replace proper heatsinking. Continuously running the TPS792xx into thermal shutdown degrades
device reliability.
6.3.6 Reverse Current
The legacy chip of TPS792xx PMOS-pass transistor has a built-in back diode that conducts reverse current
when the input voltage drops below the output voltage (for example, during power down). Current is conducted
from the output to the input and is not internally limited. If extended reverse voltage operation is anticipated,
external limiting to 5% of the rated output current is recommended.
The new chip of TPS792xx, as with most modern LDOs, excessive reverse current can damage this device.
Reverse current flows through the body diode on the pass element instead of the normal conducting channel.
At high magnitudes, this current flow degrades the long-term reliability of the device as a result of one of the
following conditions:
• Degradation caused by electromigration
• Excessive heat dissipation
• Potential for a latch-up condition
TPS792
SLVS337E – MARCH 2001 – REVISED JANUARY 2025
www.ti.com
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