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DM505 Datasheet(PDF) 77 Page - Texas Instruments

Part # DM505
Description  DM505 SoC for Vision Analytics 15mm Package (ABF) Silicon Revision 2.0
PDF  295 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

DM505 Datasheet(HTML) 77 Page - Texas Instruments

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77
DM505
www.ti.com
SPRS976E – NOVEMBER 2016 – REVISED MAY 2018
Submit Documentation Feedback
Specifications
Copyright © 2016–2018, Texas Instruments Incorporated
5.1
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
PARAMETER(3)
MIN
MAX
UNIT
VSUPPLY (Steady-State)
Supply Voltage Ranges (Steady-
State)
Core (vdd, vdd_dspeve)
-0.3
1.5
V
Analog (vdda_per, vdda_ddr_dsp,
vdda_gmac_core, vdda_osc,
vdda_csi, vdda_dac, vdda_adc)
-0.3
2.0
V
vdds_ddr1, vdds_ddr2, vdds_ddr3
(1.35V mode)
-0.3
1.65
V
vdds_ddr1, vdds_ddr2, vdds_ddr3
(1.5V mode)
-0.3
1.8
V
vdds_ddr1, vdds_ddr2, vdds_ddr3
(1.8V mode)
-0.3
2.1
V
vdds18v, vdds18v_ddr1,
vdds18v_ddr2, vdds18v_ddr3
-0.3
2.1
V
vddshv1-6 (1.8V mode)
-0.3
2.1
V
vddshv1-6 (3.3V mode)
-0.3
3.8
V
VIO (Steady-State)
Input and Output Voltage Ranges
(Steady-State)
Core I/Os
-0.3
1.5
V
Analog I/Os
-0.3
2.0
V
I/O 1.35V
-0.3
1.65
V
I/O 1.5V
-0.3
1.8
V
1.8V I/Os
-0.3
2.1
V
3.3V I/Os
-0.3
3.8
V
SR
Maximum slew rate, all supplies
105
V/s
VIO (Transient Overshoot /
Undershoot)
Input and Output Voltage Ranges (Transient Overshoot / Undershoot)
Note: valid for up to 20% of the signal period
0.2×VDD
(4)
V
TJ
Operating junction temperature range
Automotive
-40
+125
°C
TSTG
Storage temperature range after soldered onto PC Board
-55
+150
°C
Latch-up I-Test
I-test(5), All I/Os (if different levels then one line per level)
-100
100
mA
Latch-up OV-Test
Over-voltage Test(6), All supplies (if different levels then one line per level)
N/A
1.5×Vsup
ply max
V
(1) Stresses beyond those listed as absolute maximum ratings may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those listed under Section 5.4, Recommended Operating
Conditions, is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to VSS, unless otherwise noted.
(3) See I/Os supplied by this power pin in Table 4-1 Ball Characteristics.
(4) VDD is the voltage on the corresponding power-supply pin(s) for the IO.
(5) Per JEDEC JESD78 at 125°C with specified I/O pin injection current and clamp voltage of 1.5 times maximum recommended I/O
voltage and negative 0.5 times maximum recommended I/O voltage.
(6) Per JEDEC JESD78 at 125°C.
5.2
ESD Ratings
VALUE
UNIT
VESD Electrostatic discharge
Human-Body model (HBM), per AEC Q100-002(1)
±1000
V
Charged-device model (CDM), per AEC
Q100-011
All pins
±250
Corner pins (A1,
AB1, A22, AB22)
±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
5.3
Power on Hour (POH) Limits
IP
Duty Cycle
Voltage Domain
Voltage (V) (max)
Frequency (MHz)
(max)
Tj(°C)
POH
All
100%
All
All Support OPPs
Automotive Profile(1)
20000



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