5.5 Electrical Characteristics

over TA = 25°C (unless otherwise noted)(1)

PARAMETER

TEST CONDITIONS

PACKAGE

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off voltage

All Packages

–24

24

V

VBRF

Forward breakdown voltage(2)

IIO = 10mA, IO to GND

All Packages

25.5

35.5

V

VBRR

Reverse breakdown voltage(2)

IIO = –10mA, IO to GND

All Packages

–35.5

–25.5

V

VCLAMP

Clamping voltage(3)

IPP = MAX, tp = 8/20µs, IO to GND

All Packages

37

V

Clamping voltage(4)

IPP = 16A, TLP, IO to GND or GND to IO

SOT-23 &

SC-70

35

V

DFN1110-3

38

V

ILEAK

Leakage current

VIO = ±24V, IO to GND

All Packages

-50

5

50

nA

RDYN

Dynamic resistance(4)

IO to GND and GND to IO

SOT-23 &

SC-70

0.35

Ω

DFN1110-3

0.43

Ω

CL

Line capacitance(5)

VIO = 0V, f = 1MHz, Vpp = 30mV

All Packages

3

5

pF

(1)

Measurements made on each IO channel.

(2)

VBRF and VBRR are defined as the voltage when +/- 10mA is applied in the positive or negative direction respectively, before the device latches into the snapback state.

(3)

Device stressed with 8/20μs exponential decay waveform according to IEC 61000-4-5.

(4)

Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008

(5)

Measured from IO to GND on each channel.

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ESD752

SLVSJ54A – DECEMBER 2025 – REVISED DECEMBER 2025

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