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ADC12D040 Datasheet(PDF) 5 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part # ADC12D040
Description  Dual 12-Bit, 40 MSPS, 600 mW A/D Converter with Internal/External Reference
PDF  22 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

ADC12D040 Datasheet(HTML) 5 Page - National Semiconductor (TI)

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Absolute Maximum Ratings
(Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
A,VD,VDR
6.5V
V
DR
V
D + 0.3V
|V
A–VD|
≤ 100 mV
Voltage on Any Input or Output Pin
−0.3V to (V
A or VD
+0.3V)
Input Current at Any Pin (Note 3)
±25 mA
Package Input Current (Note 3)
±50 mA
Package Dissipation at T
A = 25˚C
See (Note 4)
ESD Susceptibility
Human Body Model (Note 5)
2500V
Machine Model (Note 5)
250V
Soldering Temperature,
Infrared, 10 sec. (Note 6)
235˚C
Storage Temperature
−65˚C to +150˚C
Operating Ratings (Notes 1, 2)
Operating Temperature
−40˚C
≤ T
A
≤ +85˚C
Supply Voltage (V
A,VD)
+4.75V to +5.25V
Output Driver Supply (V
DR)
+2.35V to V
D
V
REF Input
1.0V to 2.4V
CLK, PD, OE
−0.5V to (V
D + 0.5V)
Analog Input Pins
−0V to (V
A − 0.5V)
Input Common Mode Voltage
(V
CM)
V
REF/2 to VA −VREF
|AGND–DGND|
≤100mV
Package Thermal Resistance
Package
θ
J-A
64-Lead TQFP
50˚C / W
Converter Electrical Characteristics
Unless otherwise specified, the following specifications apply for AGND = DGND = DR GND = 0V, V
A VD +5V, VDR +3.0V, PD
= 0V, INT/EXT = V
D,VREF = +2.0V, OEA, OEB = 0V, fCLK = 40 MHz, tr =tf = 3 ns, CL = 20 pF/pin. Boldface limits apply for
T
J =TMIN to TMAX: all other limits TJ = 25˚C (Notes 7, 8, 9)
Symbol
Parameter
Conditions
Typical
(Note 10)
Limits
(Note 10)
Units
(Limits)
STATIC CONVERTER CHARACTERISTICS
Resolution with No Missing Codes
12
Bits (min)
INL
Integral Non Linearity (Note 11)
±0.7
±2.0
LSB (max)
DNL
Differential Non Linearity
±0.4
±1.0
LSB (max)
GE
Gain Error
Positive Error
0.51
+2.8/−1.9
%FS
Negative Error
0.68
+4/−2.7
%FS
TC GE
Gain Error Tempco
External Reference
15
ppm/oC
Internal Reference
100
ppm/oC
V
OFF
Offset Error (V
IN+=VIN−)
−0.1
±1.2
%FS (max)
TC
V
OFF
Offset Error Tempco
External Reference
3
ppm/oC
Internal Reference
3
ppm/oC
Under Range Output Code
0
0
Over Range Output Code
4095
4095
DYNAMIC CONVERTER CHARACTERISTICS
FPBW
Full Power Bandwidth
0 dBFS Input, Output at −3 dB
100
MHz
SNR
Signal-to-Noise Ratio
f
IN = 1 MHz, VIN = −0.5 dBFS
69
dB
f
IN = 10 MHz, VIN = −0.5 dBFS
68
66.5
dB (min)
SINAD
Signal-to-Noise and Distortion
f
IN = 1 MHz, VIN = −0.5 dBFS
69
dB
f
IN = 10 MHz, VIN = −0.5 dBFS
68
65.6
dB (min)
ENOB
Effective Number of Bits
f
IN = 1 MHz, VIN = −0.5 dBFS
11.1
Bits
f
IN = 10 MHz, VIN = −0.5 dBFS
10.9
10.6
Bits (min)
THD
Total Harmonic Distortion
f
IN = 1 MHz, VIN = −0.5 dBFS
−80
dB
f
IN = 10 MHz, VIN = −0.5 dBFS
−78
−69
dB (max)
H2
Second Harmonic
f
IN = 1 MHz, VIN = −0.5 dBFS
−84
dB
f
IN = 10 MHz, VIN = −0.5 dBFS
−80
−73
dB (max)
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