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GD32H757ZMT7 Datasheet(PDF) 119 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD32H757ZMT7 Datasheet(HTML) 119 Page - GigaDevice Semiconductor (Beijing) Inc. |
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119 / 151 page ![]() GD32H757xx Datasheet 118 Symbol Parameter Conditions Min Typ Max Unit PSRR Power supply rejection DC — — 65 — dB 100 kHz — — 35 — (1) Value guaranteed by design, not 100% tested in production. (2) Value guaranteed by characterization, not 100% tested in production. 4.19. CMP characteristics Table 4-49. CMP characteristics(1) Symbol Parameter Conditions Min Typ Max Unit VDDA Operating voltage — 1.71 3.3 3.6 V VIN Input voltage range — 0 — VDDA V VSC Scaler offset voltage — — 3.5 11 mV IDDA(SCALER) Scaler static consumption from VDDA BRG_EN=0 (bridge disable) — 200 226 μA BRG_EN=1 (bridge enable) — 800 942 tSTART_SCALER Scaler startup time — — — 120 μs tD(2) Propagation delay for 200 mV step with 100 mV overdrive Ultra-low power mode — 612 1217 ns Medium power mode — 102 165 ns High speed power mode — 32.4 54 ns Propagation delay for step > 200 mV with 100 mV overdrive only on positive inputs Ultra-low power mode — 930 1650 ns Medium power mode — 127 178 ns High speed power mode — 35.4 58 ns tSTART Comparator startup time to reach propagation delay specification High-speed mode — — 1.4 μs Medium mode — — 2.1 Ultra-low-power mode — — 11.6 IDDA(CMP) Current consumption from VDDA Ultra-low power mode Static — 419 434 nA With 50 kHz ±100 mV overdrive square signal — 1890 — Medium power mode Static — 4.25 4.30 μA With 50 kHz ±100 mV overdrive square signal — 3.95 — High speed power mode Static — 45.4 46.2 With 50 kHz ±100 mV overdrive square signal — 40.5 — Voffset Offset error — — 4 18 mV Vhyst Hysteresis Voltage No Hysteresis — 0 — mV |
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